KSB1366 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Collector Power Dissipation- : PC= 25 W@ TC= 25℃. Low Collector Saturation Vo.

📥 Download Datasheet

KSB1366 Datasheet Preview — Preview of KSB1366 PDF

Datasheet Specifications

Part number: KSB1366
Manufacturer: INCHANGE
File Size: 196.28 KB
Datasheet: KSB1366-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous C

KSB1366 Distributors

📁 Related Datasheet

KSB13003A KSB13003C KSB13003E KSB13003H KSB13005A KSB1015

📌 All Tags

KSB1366 PNP Transistor INCHANGE

INCHANGE KSB1366-like datasheet