KSB1366 Datasheet - INCHANGE

KSB1366, PNP Transistor

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Collector Power Dissipation- : PC= 25 W@ TC= 25℃. Low Collector Saturation Vo.

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KSB1366-INCHANGE.pdf

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Datasheet Details

Part number:

KSB1366

Manufacturer:

INCHANGE

File Size:

196.28 KB

Description:

PNP Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous C

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KSB1366 PNP Transistor INCHANGE

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