KSB601 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor KSB601 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

📥 Download Datasheet

KSB601 Datasheet Preview — Preview of KSB601 PDF

Datasheet Specifications

Part number: KSB601
Manufacturer: INCHANGE
File Size: 197.40 KB
Datasheet: KSB601-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in low-frequency power amplifiers and low- speed switching applications.
* Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

KSB601 Distributors

📁 Related Datasheet

KSB KSB-0 KSB-1 KSB0505HA-G303 KSB1015 KSB1017

📌 All Tags

KSB601 PNP Transistor INCHANGE

INCHANGE KSB601-like datasheet