KSB601 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor KSB601 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

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Datasheet Specifications

Part number: KSB601
Manufacturer: INCHANGE
File Size: 197.40 KB
Datasheet: KSB601-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in low-frequency power amplifiers and low- speed switching applications.
* Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

KSB601 Distributors

📁 Related Datasheet

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PNP Transistor INCHANGE

INCHANGE KSB601-like datasheet