KSB601 Datasheet - INCHANGE

KSB601, PNP Transistor

isc Silicon PNP Darlington Power Transistor KSB601 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

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KSB601-INCHANGE.pdf

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Datasheet Details

Part number:

KSB601

Manufacturer:

INCHANGE

File Size:

197.40 KB

Description:

PNP Transistor

Applications

* Designed for use in low-frequency power amplifiers and low- speed switching applications.
* Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

KSB601 Distributors

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KSB601 PNP Transistor INCHANGE

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