Datasheet Details
- Part number
- KSB601
- Manufacturer
- INCHANGE
- File Size
- 197.40 KB
- Datasheet
- KSB601-INCHANGE.pdf
- Description
- PNP Transistor
KSB601 Description
isc Silicon PNP Darlington Power Transistor KSB601 .
High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A.
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min).
Low Collector-Emitter S.
KSB601 Applications
* Designed for use in low-frequency power amplifiers and low-
speed switching applications.
* Ideal for use in direct drive from IC output for magnet drivers
such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base V
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