Datasheet4U Logo Datasheet4U.com

KSB596 - PNP Transistor

KSB596 Description

isc Silicon PNP Power Transistor .
Low Collector Saturation Voltage :VCE(sat)= -1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Complement.

KSB596 Applications

* Power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

📥 Download Datasheet

Preview of KSB596 PDF
datasheet Preview Page 2

Datasheet Details

Part number
KSB596
Manufacturer
INCHANGE
File Size
196.76 KB
Datasheet
KSB596-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • KSB546 - PNP Transistor (Samsung semiconductor)
  • KSB564 - PNP Silicon Epitaxial Planar Transistor (SEMTECH)
  • KSB564A - Audio Frequency Power Amplifier (Fairchild Semiconductor)
  • KSB - Low-profile Tact Switch (ITT Industries)
  • KSB-0 - Low-profile Tact Switch (ITT Industries)
  • KSB-1 - Low-profile Tact Switch (ITT Industries)
  • KSB0505HA-G303 - DC FAN (DELTA)
  • KSB1015 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

INCHANGE KSB596-like datasheet