KSB596 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Low Collector Saturation Voltage :VCE(sat)= -1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Complement.

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Datasheet Specifications

Part number: KSB596
Manufacturer: INCHANGE
File Size: 196.76 KB
Datasheet: KSB596-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

KSB596 Distributors

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KSB596 PNP Transistor INCHANGE

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