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KSB1017 - PNP Transistor

KSB1017 Description

isc Silicon PNP Power Transistor KSB1017 .
Low Collector Saturation Voltage- : VCE(sat)= -1. Good Linearity of hFE. Complement to Type KSD1408. 100% avalanche t.

KSB1017 Applications

* Designed for power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Volta

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Datasheet Details

Part number
KSB1017
Manufacturer
INCHANGE
File Size
192.05 KB
Datasheet
KSB1017-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE KSB1017-like datasheet

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