KSB1017 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor KSB1017 .
Low Collector Saturation Voltage- : VCE(sat)= -1. Good Linearity of hFE. Complement to Type KSD1408. 100% avalanche t.

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Datasheet Specifications

Part number: KSB1017
Manufacturer: INCHANGE
File Size: 192.05 KB
Datasheet: KSB1017-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Volta

KSB1017 Distributors

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PNP Transistor INCHANGE

INCHANGE KSB1017-like datasheet