KSB13003A Datasheet, Transistor, SemiHow

KSB13003A Features

  • Transistor
  • VCBO = 700V
  • VCEO = 400V
  • VBEO = 9V
  • IC = 1.5A TO-92 TO-92L TO-126 TO-220 3 2 1 3 2 1 3 2 1 3 2 1 Ordering Information Ordering number KSB1

PDF File Details

Part number:

KSB13003A

Manufacturer:

SemiHow

File Size:

243.73kb

Download:

📄 Datasheet

Description:

Npn silicon power transistor.

  • High Speed Switching
  • Suitable for Electronic Ballast up to 21W Features
  • VCBO = 700V
  • VCEO = 4

  • Datasheet Preview: KSB13003A 📥 Download PDF (243.73kb)
    Page 2 of KSB13003A Page 3 of KSB13003A

    TAGS

    KSB13003A
    NPN
    Silicon
    Power
    Transistor
    SemiHow

    📁 Related Datasheet

    KSB13003C - NPN Silicon Power Transistor (SemiHow)
    KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description • High voltage, High speed p.

    KSB13003E - NPN Silicon Power Transistor (SemiHow)
    KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • High Voltage, .

    KSB13003H - NPN Silicon Power Transistor (SemiHow)
    KSX13003H Series KSB13003H KSC13003H / KSU13003H NPN Silicon Power Transistor, VCBO= 900V, VCEO= 530V, IC= 1.5A General Description • High voltage, .

    KSB13005A - NPN Silicon Power Transistor (SemiHow)
    KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D.

    KSB1366 - PNP Transistor (Fairchild Semiconductor)
    KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless othe.

    KSB1366 - PNP Transistor (INCHANGE)
    isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC.

    KSB1015 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
    KSB1015 KSB1015 Low Frequency Power Amplifier • Low Collector Emitter Saturation Voltage • Complement to KSD1406 1 TO-220F 2.Collector 3.Emitter 1.

    KSB1015 - PNP Transistor (INCHANGE)
    isc Silicon PNP Power Transistor KSB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp.

    KSB1017 - PNP Silicon Epitaxial Transistor (Fairchild Semiconductor)
    KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Abs.

    KSB1017 - PNP Transistor (INCHANGE)
    isc Silicon PNP Power Transistor KSB1017 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts