KSD5701 Datasheet | Fairchild Semiconductor

.. High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) - High Collector-Base Voltage : VCBO=1500V - High Switching Speed : t F = 0.4µs (Max.) - For Color TV B Equivalent Circuit C 50Ω typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 3.5 10 Units V V V A A W °C °C Data Shee . 50 150 - 55 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) f T VF t F Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time Test Condition VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 2.5A IC = 2.5A, IB = 0.8A IC = 2.5A, IB = 0.8A VCE = 10V, IC = 0.5A IF = 3.5A VCC = 200V, IC = 3A IB1 = 0.8A, IB2 = - 1.6A RL = 66.7Ω 3 2 0.4 Min. 40 10 2.5 Typ. Max. 10 250 30 5 1.5 V V MHz V µs Units µA m A ©2000 Fairchild Semiconductor International . Rev. A, February 2000 Data Sheet 4 U . .. Typical Characteristics VCE = 5V IC[A], COLLECTOR CURRENT IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A IB = 0.4A IB = 0.2A h FE, DC CURRENT GAIN 0...