KSP42
Fairchild Semiconductor
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High voltage transistor.
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KSP42 - Dip Switch
(OTAX)
ピアノ
K シリーズ
な リフロー
1. ナイフエッジ ･ ハイプレッシャーによりして します。 2. は 200kg/mm2 あるのでによるは しません。 3. とは IC とくじですから、が ます。
DC5V 10mA 50m Ω AC300V 1 100.
KSP43 - High Voltage Transistor
(Fairchild Semiconductor)
KSP42/43
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V • Collector Power Dissipation: PC(max)=625mW
1
T.
KSP44 - High Voltage Transistor
(Fairchild Semiconductor)
KSP44/45
KSP44/45
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC (max)=625mW
1
.
KSP45 - High Voltage Transistor
(Fairchild Semiconductor)
KSP44/45
KSP44/45
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC (max)=625mW
1
.
KSP-1MLR2 - Silicon Photodiode Mounted
(KODENSHI KOREA CORP)
KSP-1MLR2 1. Scope
KODENSHI KOREA CORP
The KSP-1MLR2, a silicon photodiode mounted in a TO-18 type header with black epoxy encapsulation, provides w.
KSP05 - Amplifier Transistor
(Fairchild Semiconductor)
KSP05/06
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement.
KSP05 - NPN EPITAXIAL SILICON TRANSISTOR
(Samsung semiconductor)
.
KSP06 - Amplifier Transistor
(Fairchild Semiconductor)
KSP05/06
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement.
KSP06 - NPN EPITAXIAL SILICON TRANSISTOR
(Samsung semiconductor)
.
KSP10 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
KSP10
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features VHF/UHF 。 VHF/UHF Tr.
