NE555N Datasheet, timer equivalent, Fairchild Semiconductor

NE555N Features

  • Timer
  • High Current Drive Capability (200mA)
  • Adjustable Duty Cycle
  • Temperature Stability of 0.005%/°C
  • Timing From µSec to Hours
  • Turn off Time

PDF File Details

Part number:

NE555N

Manufacturer:

Fairchild Semiconductor

File Size:

150.31kb

Download:

📄 Datasheet

Description:

Single timer. The LM555/NE555/SA555 is a highly stable controller capable of producing accurate timing pulses. With a monostable operation, the tim

Datasheet Preview: NE555N 📥 Download PDF (150.31kb)
Page 2 of NE555N Page 3 of NE555N

NE555N Application

  • Applications
  • Precision Timing
  • Pulse Generation
  • Time Delay Generation
  • Sequential Timing Description The LM55

TAGS

NE555N
Single
Timer
Fairchild Semiconductor

📁 Related Datasheet

NE555 - CMOS GENERAL PURPOSE TIMER (HTC)
CMOS GENERAL PURPOSE TIMER FEATURES  Exact equivalent in most cases for SE/NE555  Low Supply Current  High speed operation – 500KHz guaranteed  Wi.

NE555 - Precision Timer (Texas Instruments)
NA555, NE555, SA555, SE555 SLFS022J – SEPTEMBER 1973 – REVISED FEBRUARY 2025 xx555 Precision Timers 1 Features • Timing from microseconds to hours •.

NE555 - General-purpose single bipolar timer (ST Microelectronics)
NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr.

NE555 - Single Timer (Fairchild)
LM555/NE555/SA555 Single Timer .fairchildsemi. Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit.

NE555 - Precision Timer (Diodes)
NE555 PRECISION TIMER Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time-d.

NE555 - SINGLE TIMER (UTC)
UNISONIC TECHNOLOGIES CO., LTD NE555 LINEAR INTEGRATED CIRCUIT SINGLE TIMER  DESCRIPTION The UTC NE555 is a highly stable timer integrated circui.

NE5550234 - Silicon Power MOSFET (Renesas)
Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS =.

NE5550279A - Silicon Power LDMOS FET (Renesas)
Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7..

NE5550779A - Silicon Power LDMOS FET (Renesas)
Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7..

NE5550979A - Silicon Power LDMOS FET (Renesas)
Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7..

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts