P10N20C Datasheet - Fairchild Semiconductor

P10N20C FQP10N20C

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand.

P10N20C Features

* 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-220 FQP Series GD S TO-220F FQPF

P10N20C_FairchildSemiconductor.pdf