P10NB20FP Datasheet - STMicroelectronics

STP10NB20FP

P10NB20FP General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

P10NB20FP Datasheet (153.95 KB)

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P10NB20FP

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STMicroelectronics ↗

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153.95 KB

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Stp10nb20fp.
STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP10NB20 STP10NB20F P s s s s s V DSS 200 V 200 V R DS(on) < 0.40 Ω < 0.4.

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P10NB20FP General Description

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