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RFD4N06L - N-Channel Power MOSFET

RFD4N06L Description

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-.
only.

RFD4N06L Features

* 4A, 60V
* rDS(ON) = 0.600Ω
* Design Optimized for 5 Volt Gate Drive
* Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits
* SOA is Power Dissipation Limited
* 175oC Rated Junction Temperature
* Logic Level Gate
* High Input Impe

RFD4N06L Applications

* such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply volta

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