* 4A, 60V
* rDS(ON) = 0.600Ω
* Design Optimized for 5 Volt Gate Drive
* Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits
* SOA is Power Dissipation Limited
* 175oC Rated Junction Temperature
* Logic Level Gate
* High Input Impe
RFD4N06LSM Datasheet (38.38 KB)
RFD4N06LSM
Fairchild Semiconductor
38.38 KB
N-channel power mosfet.
RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-.
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