Part number:
SSP45N20A
Manufacturer:
Fairchild Semiconductor
File Size:
277.90 KB
Description:
Advanced power mosfet.
SSP45N20A Datasheet (277.90 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) 1 2 3
SSP45N20A Datasheet (277.90 KB)
SSP45N20A
Fairchild Semiconductor
277.90 KB
Advanced power mosfet.
📁 Related Datasheet
SSP45N20B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
SSP45N20B/SSS45N20B
November 2001
SSP45N20B/SSS45N20B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
SSP45N10 - N-Channel Enhancement Mode MOSFET
(SeCoS)
Elektronische Bauelemente
SSP45N10
45A , 100V , RDS(ON) 22 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies ha.
SSP4N55 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
(Samsung Electronics)
..
..
..
..
..
.
SSP4N60 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
(Samsung Electronics)
..
..
..
..
..
.
SSP4N60AS - Advanced Power MOFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSP4N60AS - Advanced Power MOFET
(Samsung Electronics)
.
SSP4N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pro.
SSP4N70 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs
(Samsung Electronics)
..
..
..
..
..
..
..
.
