SSP4N60B Datasheet, Mosfet, Fairchild Semiconductor

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SSP4N60B

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Fairchild Semiconductor

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📄 Datasheet

Description:

600v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

✔ SSP4N60B Features

4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capabi

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SSP4N60B 600V N-Channel MOSFET Fairchild Semiconductor