SSP4N60B Datasheet - Fairchild Semiconductor

SSP4N60B - 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSP4N60B Features

* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Ser

SSP4N60B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

SSP4N60B

Manufacturer:

Fairchild Semiconductor

File Size:

890.06 KB

Description:

600v n-channel mosfet.

SSP4N60B Distributor

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SSP4N60B 600V N-Channel MOSFET Fairchild Semiconductor