Part number:
SSP4N80A
Manufacturer:
Fairchild Semiconductor
File Size:
282.71 KB
Description:
Advanced power mosfet.
SSP4N80A Datasheet (282.71 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ.) 1 2 3 SSP4N80A BVDSS = 800 V RDS(on) = 4.0 Ω ID = 4 A TO-220 1.Gate 2. Drain 3. Source
SSP4N80A Datasheet (282.71 KB)
SSP4N80A
Fairchild Semiconductor
282.71 KB
Advanced power mosfet.
📁 Related Datasheet
SSP4N80 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs
(Samsung Electronics)
..
..
..
..
..
..
..
.
SSP4N80AS - Advanced Power MOSFET
(Fairchild Semiconductor)
..
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
SSP4N55 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
(Samsung Electronics)
..
..
..
..
..
.
SSP4N60 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET
(Samsung Electronics)
..
..
..
..
..
.
SSP4N60AS - Advanced Power MOFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSP4N60AS - Advanced Power MOFET
(Samsung Electronics)
.
SSP4N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pro.
SSP4N70 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs
(Samsung Electronics)
..
..
..
..
..
..
..
.
