SSP4N80A Datasheet, Mosfet, Fairchild Semiconductor

SSP4N80A Features

• Mosfet Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low

PDF File Details

Part number:

SSP4N80A

Manufacturer:

Fairchild Semiconductor

File Size:

282.71kb

Download:

📄 Datasheet

Description:

Advanced power mosfet.

TAGS

SSP4N80A

Fairchild Semiconductor

📁 Related Datasheet

SSP4N80 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs (Samsung Electronics)
.. .. .. .. .. .. .. .

SSP4N80AS - Advanced Power MOSFET (Fairchild Semiconductor)
.. Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.

SSP4N55 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET (Samsung Electronics)
.. .. .. .. .. .

SSP4N60 - (SSP4N55 / SSP4N60) N-Channel Power MOSFET (Samsung Electronics)
.. .. .. .. .. .

SSP4N60AS - Advanced Power MOFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSP4N60AS - Advanced Power MOFET (Samsung Electronics)
.

SSP4N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.

SSP4N70 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs (Samsung Electronics)
.. .. .. .. .. .. .. .

SSP45N10 - N-Channel Enhancement Mode MOSFET (SeCoS)
Elektronische Bauelemente SSP45N10 45A , 100V , RDS(ON) 22 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

SSP45N20A - advanced power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology .. SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω.