Datasheet4U Logo Datasheet4U.com

SSW7N60B

600V N-Channel MOSFET

SSW7N60B Features

* 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! !

SSW7N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSW7N60B Datasheet (656.23 KB)

Preview of SSW7N60B PDF

Datasheet Details

Part number:

SSW7N60B

Manufacturer:

Fairchild Semiconductor

File Size:

656.23 KB

Description:

600v n-channel mosfet.

📁 Related Datasheet

SSW-104-01-T-S Socket Strip (Samtec)

SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)

SSW-124 DC-6 GHz High Isolation SPDT GaAs MMIC Switch (Stanford Microdevices)

SSW-1xx-xx-F-x Socket Strip (Samtec)

SSW-1xx-xx-G-x Socket Strip (Samtec)

SSW-1xx-xx-S-x Socket Strip (Samtec)

SSW-208 DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)

SSW-224 DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH (Stanford Microdevices)

SSW-308 DC-3 GHz Low Cost GaAs MMIC SPDT Switch (Stanford Microdevices)

SSW-408 DC-4 GHz High Power GaAs MMIC SPDT Switch (Stanford Microdevices)

TAGS

SSW7N60B 600V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

SSW7N60B Datasheet Preview Page 2 SSW7N60B Datasheet Preview Page 3

SSW7N60B Distributor