Si4532DY Dual N- and P-Channel FET

Fairchild Semiconductor

Description

Si4532DY September 1999 Si4532DY * Dual N- and P-Channel Enhancement Mode Field Effect Transistor General .
Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, D.

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Datasheet Specifications

Part number: Si4532DY
Manufacturer: Fairchild Semiconductor
File Size: 296.63 KB
Datasheet: Si4532DY-FairchildSemiconductor.pdf
Description: Dual N- and P-Channel FET

Features

* These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

Applications

* such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel 3.9A, 30V. RDS(ON) = 0.065Ω @VGS = 10V RDS(ON) = 0.095Ω @VGS = 4.5V. P-Channel -3.5A,-30V. RDS(ON)= 0.085Ω @VGS = -10V RDS

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Si4532DY Dual and P-Channel FET Fairchild Semiconductor

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