SI4435DY
Fairchild Semiconductor
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30v p-channel mosfet. This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for p
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SI4435DY - Power MOSFET
(International Rectifier)
PD- 93768A
Si4435DY
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
S
1
8 7
A D D D.
SI4435DY - P-Channel MOSFET
(Kexin)
SSMMDD TTyyppee
■ Features
● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V
P-Channel MOSFET SI4435DY (KI4435DY)
SOP-8
MOSFET
1.50 0.1.
SI4435DY-T1-E3 - P-Channel MOSFET
(VBsemi)
SI4435DY-T1-E3
.VBsemi.
SI4435DY-T1-E3 P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.024 .
SI4435DYPBF - HEXFET Power MOSFET
(International Rectifier)
..
PD- 95133
Si4435DYPbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape &.
Si4435 - P-Channel Enhancement MOSFET
(Nanxin)
Features
·Low On resistance. ·-4.5V drive. ·RoHS pliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimensions
Specifications
Absolute.
SI4435BDY - P-Channel 30-V (D-S) MOSFET
(Vishay Siliconix)
Si4435BDY
..
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
FEATURES
ID (A)
−9.1 −6.9
rDS(on) (W)
0.020.
Si4435FDY - P-Channel 30 V (D-S) MOSFET
(Vishay)
.vishay.
Si4435FDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SO-8 Single D D5 D6 D7 8
FEATURES
• TrenchFET® Gen III p-channel power MOSF.
Si4430 - ISM TRANSCEIVER
(Silicon Laboratories)
.
SI4430BDY - N-Channel MOSFET
(Vishay Siliconix)
Specification Comparison
..
Vishay Siliconix
Si4430BDY vs. Si4430DY
Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-.
SI4430DY - N-Channel MOSFET
(Vishay Siliconix)
Si4430DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.004 (typ)@ VGS = 10 V 0.008 @ VGS = 4.5.