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Si6433DQ

20V P-Channel PowerTrench MOSFET

Si6433DQ Features

* 4.5 A,

* 20 V. RDS(ON) = 47 mΩ @ VGS =

* 4.5 V RDS(ON) = 65 mΩ @ VGS =

* 2.5 V RDS(ON) = 100 mΩ @ VGS =

* 1.8 V

* RDS(ON) rated for use with 1.8 V logic

* Low gate charge (13nC typical)

* High performance trench technology for ex

Si6433DQ General Description

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications

* Power management

* L.

Si6433DQ Datasheet (133.46 KB)

Preview of Si6433DQ PDF

Datasheet Details

Part number:

Si6433DQ

Manufacturer:

Fairchild Semiconductor

File Size:

133.46 KB

Description:

20v p-channel powertrench mosfet.

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TAGS

Si6433DQ 20V P-Channel PowerTrench MOSFET Fairchild Semiconductor

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