IRFS450B Datasheet - Fairchild

IRFS450B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS450B Features

* 9.6A, 500V, RDS(on) = 0.39Ω @VGS = 10 V Low gate charge ( typical 87 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G D S TO-3PF IRFS Series ! S Absolute Maxi

IRFS450B_Fairchild.pdf