MJE701 Datasheet, Transistor, Fairchild

PDF File Details

Part number:

MJE701

Manufacturer:

Fairchild

File Size:

51.67kb

Download:

📄 Datasheet

Description:

Pnp epitaxial silicon darlington transistor.

TAGS

MJE701

Fairchild

📁 Related Datasheet

MJE700 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE700 DESCRIPTION ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-.

MJE700 - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designe.

MJE700 - DARLINGTON POWER TRANSISTORS (ON)
.. MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devi.

MJE700 - PNP Epitaxial Silicon Darlington Transistor (Fairchild)
MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5.

MJE700 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (Central Semiconductor)
MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRA.

MJE700G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designe.

MJE700T - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designe.

MJE700T - POWER TRANSISTOR (Central Semiconductor)
MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CE.

MJE700T - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @.

MJE701 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @.