MJE702T PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702T .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -80 V. DC Current Gain. : hFE = 750(Min) @ IC= -1.

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Datasheet Specifications

Part number: MJE702T
Manufacturer: INCHANGE
File Size: 210.75 KB
Datasheet: MJE702T-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4

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MJE702T PNP Transistor INCHANGE

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