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MJE700 PNP Transistor

MJE700 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE700 .
DC Current Gain. : hFE = 2000(TYP) @ IC= -2A. Minimum Lot-to-Lot variations for robust device performance and reliable operation APP.

MJE700 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4

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Datasheet Details

Part number
MJE700
Manufacturer
INCHANGE
File Size
207.61 KB
Datasheet
MJE700-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJE700-like datasheet