* High DC Current Gain
* hFE = 2000 (Typ) @ IC = 2.0 Adc
* Monolithic Construction with Built
* in Base
* Emitter Resistors to Limit Leakage
* Multiplication
* Choice of Packages
* MJE700 and MJE800 Series
* These Devices are Pb
MJE700G
125.95 KB
Plastic darlington complementary silicon power transistors.
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
Plastic Darlington Complementary Silicon Power Transistors
These devices are designe.
📁 Related Datasheet
MJE700 PNP Transistor (INCHANGE)
MJE700 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MJE700 DARLINGTON POWER TRANSISTORS (ON)
MJE700 PNP Epitaxial Silicon Darlington Transistor (Fairchild)
MJE700 COMPLEMENTARY POWER DARLINGTON TRANSISTORS (Central Semiconductor)
MJE700T 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MJE700T POWER TRANSISTOR (Central Semiconductor)
MJE700T PNP Transistor (INCHANGE)
MJE701 PNP Epitaxial Silicon Darlington Transistor (Fairchild)
MJE701 PNP Transistor (INCHANGE)
TAGS
Image Gallery
