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MJE702 PNP Transistor

MJE702 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJE702 .
DC Current Gain. : hFE = 2000(TYP) @ IC= -2A. Minimum Lot-to-Lot variations for robust device performance and reliable operation APP.

MJE702 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4

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Datasheet Details

Part number
MJE702
Manufacturer
INCHANGE
File Size
207.28 KB
Datasheet
MJE702-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJE702-like datasheet