NDB6051 Datasheet - Fairchild

NDB6051 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB6051 Features

* 48 A, 50 V. RDS(ON) = 0.022 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

NDB6051_FairchildSemiconductor.pdf