Datasheet4U Logo Datasheet4U.com

NDB6051

N-Channel MOSFET

NDB6051 Features

* 48 A, 50 V. RDS(ON) = 0.022 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

NDB6051 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB6051 Datasheet (67.02 KB)

Preview of NDB6051 PDF

Datasheet Details

Part number:

NDB6051

Manufacturer:

Fairchild

File Size:

67.02 KB

Description:

N-channel mosfet.

📁 Related Datasheet

NDB6050 N-Channel MOSFET (Fairchild)

NDB6050L N-Channel MOSFET (Fairchild)

NDB6020 N-Channel MOSFET (Fairchild)

NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)

NDB6020P N-Channel MOSFET (Fairchild)

NDB603 N-Channel MOSFET (Fairchild)

NDB6030 N-Channel MOSFET (Fairchild)

NDB6030L N-Channel MOSFET (Fairchild)

NDB6030PL P-Channel MOSFET (Fairchild)

NDB603AL N-Channel MOSFET (Fairchild)

TAGS

NDB6051 N-Channel MOSFET Fairchild

Image Gallery

NDB6051 Datasheet Preview Page 2 NDB6051 Datasheet Preview Page 3

NDB6051 Distributor