* 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 millio
NDP610BE
Fairchild
73.92 KB
N-channel enhancement mode field effect transistor.
May 1994
NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor
General D.
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