NE558D
Fairchild
43.78kb
Quad timer. The NE558 series are monolithic Quad Timers which can be used to produce four entirely independent timing functions. These highly sta
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NE558 - Quad timer
(Philipss)
INTEGRATED CIRCUITS
NE558 Quad timer
Product data Supersedes data of 2001 Aug 03
Philips Semiconductors
2003 Feb 14
Philips Semiconductors
Quad tim.
NE558 - Quad Timer
(Fairchild)
.fairchildsemi.
NE558
Quad Timer
Features
• • • • • Wide Supply Voltage Range: 4.5V To 16V 100 mA Output Current Per Section Edge Triggered Wi.
NE558 - QUAD TIMER
(Unisonic Technologies)
UTCNE558 LINEAR INTEGRATED CIRCUIT
QUAD TIMER
DESCRIPTION
The UTC NE558 is a monolithic quad timer which can be used to produce four entirely indepen.
NE558D - Quad timer
(Philipss)
INTEGRATED CIRCUITS
NE558 Quad timer
Product data Supersedes data of 2001 Aug 03
Philips Semiconductors
2003 Feb 14
Philips Semiconductors
Quad tim.
NE558N - Quad timer
(Philipss)
INTEGRATED CIRCUITS
NE558 Quad timer
Product data Supersedes data of 2001 Aug 03
Philips Semiconductors
2003 Feb 14
Philips Semiconductors
Quad tim.
NE5500179A - OPERATION SILICON RF POWER MOSFET
(NEC)
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP at VDS .
NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm .
NE5510279A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = .
NE5511279A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
(NEC)
NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 .
NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET
(CEL)
DISCONTINUED
SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION The .
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