Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Features
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
- Current Transfer Ratio In Select Groups.
- Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
- Safety and Regulatory Approvals:.
- UL1577, 4,170 VACRMS for 1 Minute.
- DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage.
