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FCPF36N60NT, FCP36N60N N-Channel MOSFET

FCPF36N60NT Description

FCP36N60N / FCPF36N60NT * N-Channel SupreMOS® MOSFET FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ December 2013 Fe.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCPF36N60NT Features

* RDS(on) = 81 mΩ (Typ. ) @ VGS = 10 V, ID = 18 A
* Ultra Low Gate Charge (Typ. Qg = 86 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 361 pF)
* 100% Avalanche Tested

FCPF36N60NT Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FCPF36N60NT, FCP36N60N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FCPF36N60NT, FCP36N60N
Manufacturer
Fairchild Semiconductor
File Size
822.58 KB
Datasheet
FCP36N60N-FairchildSemiconductor.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FCPF36N60NT, FCP36N60N.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Fairchild Semiconductor
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