FDB86135 MOSFET

Fairchild Semiconductor

FDB86135 Description

FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ May 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

FDB86135 Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* RoHS Compliant

FDB86135 Applications

* DC-DC primary bridge
* DC-DC Synchronous rectification
* Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Contin

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Datasheet Details

Part number: FDB86135
Manufacturer: Fairchild Semiconductor
File Size: 205.33 KB
Datasheet: FDB86135-FairchildSemiconductor.pdf
Description: MOSFET

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MOSFET Fairchild Semiconductor

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