Datasheet Details
- Part number
- FDD8870
- Manufacturer
- Fairchild Semiconductor
- File Size
- 464.85 KB
- Datasheet
- FDD8870_FairchildSemiconductor.pdf
- Description
- N-Channel PowerTrench MOSFET
FDD8870 Description
FDD8870 / FDU8870 September 2004 FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
FDD8870 Features
* r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
* r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
* High performance trench technology for extremely low r DS(ON)
FDD8870 Applications
* DC/DC converters
* High power and current handling capability
D G S
I-PAK (TO-251AA) G D S
G
D
D-PAK TO-252 (TO-252)
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous
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