Datasheet4U Logo Datasheet4U.com

FDH50N50 500V N-Channel MOSFET

FDH50N50 Description

FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDH50N50 Features

* 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
* Low gate charge ( typical 105 nC)
* Low Crss ( typical 45 pF)
* Fast switching
* 100% avalanche tested

📥 Download Datasheet

Preview of FDH50N50 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDH1040 - Fixed Inductors (TOKO)
  • FDH1040B - Fixed Inductors (TOKO)
  • FDH210N08 - N-Channel MOSFET (ON Semiconductor)
  • FDH300 - Low-Leakage Diode (ON Semiconductor)
  • FDH300A - Low-Leakage Diode (ON Semiconductor)
  • FDH333 - Low-Leakage Diode (ON Semiconductor)
  • FDH3595 - High Conductance Low-Leakage Diod (ON Semiconductor)
  • FDH3632 - 100V 80A N-Channel MOSFET (ON Semiconductor)

📌 All Tags

500V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDH50N50-like datasheet