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FDR4410 N-Channel MOSFET

FDR4410 Description

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General .
The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY.

FDR4410 Features

* 9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

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