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FDW2507NZ - Common Drain N-Channel 2.5V specified PowerTrench MOSFET

FDW2507NZ Description

FDW2507NZ March 2003 FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General .
This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @.

FDW2507NZ Features

* 7.5 A, 20 V RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V
* Isolated source and drain pins
* ESD protection diode (note 3)
* High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V

FDW2507NZ Applications

* Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note

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Datasheet Details

Part number
FDW2507NZ
Manufacturer
Fairchild Semiconductor
File Size
130.12 KB
Datasheet
FDW2507NZ_FairchildSemiconductor.pdf
Description
Common Drain N-Channel 2.5V specified PowerTrench MOSFET

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Common Drain N-Channel 2.5V specified PowerTrench MOSFET Fairchild Semiconductor
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