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BB 512 Silicon Variable Capacitance Diode q q BB 512 For AM tuning applications Specified tuning range 1 … 8 V Type BB 512 Ordering Code (tape an

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FDW2502PZ March 2000 PRELIMINARY FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFE

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FDW2501N May 2000 PRELIMINARY FDW2501N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is

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BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.0 V Type BB 112 Marking – Ordering

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FDW2504P April 2000 PRELIMINARY FDW2504P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET

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www.DataSheet4U.com January 2006 FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY100PZ Single P-Channel (– 2.5V) Specified Powe

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FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is

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ITF87008DQT Data Sheet March 2000 File Number 4814.2 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 Features • U

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ITF87012SVT Data Sheet March 2000 File Number 4810.2 6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 Features • Ultra Low

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FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugge

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FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are pro

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FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Sem

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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USB10H February 1999 USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description These P-Channel 2.5V specified MOSFETs are produce

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SMD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS

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FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairc

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FDC606P December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed sp

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FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g

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FDS9431A September 1999 FDS9431A P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchil

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