FDC6401N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6401N Features
* 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
* Low gate charge (3.3 nC)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability Applications
* DC/DC converter
* Battery
