FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General .
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convention.

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Datasheet Specifications

Part number: FDC6401N
Manufacturer: Fairchild Semiconductor
File Size: 76.34 KB
Datasheet: FDC6401N_FairchildSemiconductor.pdf
Description: Dual N-Channel 2.5V Specified PowerTrench MOSFET

Features

* 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
* Low gate charge (3.3 nC)
* High performance trench technology for extremely low RDS(ON)

Applications

* DC/DC converter
* Battery Protection
* Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous

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FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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