FDC610PZ P-Channel MOSFET

ON Semiconductor

Description

FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET *30V, *4.9A, 42mΩ .
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state re.

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Datasheet Specifications

Part number: FDC610PZ
Manufacturer: ON Semiconductor ↗
File Size: 443.38 KB
Datasheet: FDC610PZ-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Max rDS(on) = 42mΩ at VGS =
* 10V, ID =
* 4.9A
* Max rDS(on) = 75mΩ at VGS =
* 4.5V, ID =
* 3.7A
* Low gate charge (17nC typical).
* High performance trench technology for extremely low rDS(on).
* SuperSOTTM
* 6 package: sm

Applications

* load switching and power management, battery charging circuits, and DC/DC conversion. Application
* DC - DC Conversion S D D Pin 1 G D D SuperSOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source

FDC610PZ Distributors

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FDC610PZ P-Channel MOSFET ON Semiconductor

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