FDC610PZ Datasheet (ON Semiconductor)

FDC610PZ, P-Channel MOSFET

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switc

FDC610PZ Features

* Max rDS(on) = 42mΩ at VGS =

* 10V, ID =

* 4.9A

* Max rDS(on) = 75mΩ at VGS =

* 4.5V, ID =

* 3.7A

* Low gate charge (17nC typical).

* High performance trench technology for extremely low rDS(on).

* SuperSOTTM

* 6 package: sm