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FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET

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Description

FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General .
This P -Channel 2.

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Datasheet Specifications

Part number
FDG6306P
Manufacturer
Fairchild Semiconductor
File Size
61.66 KB
Datasheet
FDG6306P_FairchildSemiconductor.pdf
Description
P-Channel 2.5V Specified PowerTrench MOSFET

Features

* 0.6 A,
* 20 V.
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =
* 4.5 V RDS(ON) = 630 mΩ @ V GS =

Applications

* wi th a wide range of gate drive voltage (2.5V

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