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FDG6306P

P-Channel 2.5V Specified PowerTrench MOSFET

FDG6306P Features

* 0.6 A,

* 20 V.

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =

* 4.5 V RDS(ON) = 630 mΩ @ V GS =

* 2.5 V Applications

FDG6306P Datasheet (61.66 KB)

Preview of FDG6306P PDF

Datasheet Details

Part number:

FDG6306P

Manufacturer:

Fairchild Semiconductor

File Size:

61.66 KB

Description:

P-channel 2.5v specified powertrench mosfet.

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FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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