Part number:
FDG6306P
Manufacturer:
Fairchild Semiconductor
File Size:
61.66 KB
Description:
P-channel 2.5v specified powertrench mosfet.
FDG6306P_FairchildSemiconductor.pdf
Datasheet Details
FDG6306P Features
* 0.6 A,
* 20 V.
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =
* 4.5 V RDS(ON) = 630 mΩ @ V GS =
* 2.5 V Applications
FDG6306P_FairchildSemiconductor.pdf
Datasheet Details
FDG6306P
Fairchild Semiconductor
61.66 KB
P-channel 2.5v specified powertrench mosfet.
📁 Related Datasheet
FDG6306P P-Channel MOSFET (ON Semiconductor)
FDG6301N Dual N-Channel/ Digital FET (Fairchild Semiconductor)
FDG6301N Dual N-Channel Digital FET (ON Semiconductor)
FDG6301N-F085 Dual N-Channel Digital FET (ON Semiconductor)
FDG6302P Dual P-Channel/ Digital FET (Fairchild Semiconductor)
FDG6303N Dual N-Channel Digital FET (Fairchild Semiconductor)
FDG6303N Dual N-Channel Digital FET (ON Semiconductor)
FDG6304P Dual P-Channel Digital FET (ON Semiconductor)
FDG6306P Distributor