FQI5N50C - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D Swww. DataSheet4U. com FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Curre.

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