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FQI7N60 - 600V N-Channel MOSFET

FQI7N60 Description

FQB7N60 / FQI7N60 * N-Channel QFET® MOSFET May 2014 FQB7N60 / FQI7N60 N-Channel QFET® MOSFET 600 V, 7.4 A, 1.0 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQI7N60 Features

* 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM

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Datasheet Details

Part number
FQI7N60
Manufacturer
Fairchild Semiconductor
File Size
885.94 KB
Datasheet
FQI7N60_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI7N60-like datasheet