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FQP9N90C 900V N-Channel MOSFET

FQP9N90C Description

FQP9N90C / FQPF9N90C * N-Channel QFET® MOSFET FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP9N90C Features

* 8 A, 900 V, RDS(on) = 1.4 Ω (Max. ) @ VGS = 10 V, ID = 4 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR E

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP9N90C-like datasheet