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FQT13N06 60V N-Channel MOSFET

FQT13N06 Description

FQT13N06 January 2002 QFET FQT13N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQT13N06 Features

* 2.8A, 60V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IA

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60V N-Channel MOSFET Fairchild Semiconductor
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