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IRF510 - N-Channel Power MOSFET

IRF510 Description

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.

IRF510 Features

* 5.6A, 100V
* rDS(ON) = 0.540Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines fo

IRF510 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. Ordering Info

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Datasheet Details

Part number
IRF510
Manufacturer
Fairchild Semiconductor
File Size
90.67 KB
Datasheet
IRF510_FairchildSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Fairchild Semiconductor
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