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IRFI730B 400V N-Channel MOSFET

IRFI730B Description

IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK IRFI

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI730B-like datasheet