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IRFNL210B 200V N-Channel MOSFET

IRFNL210B Description

www.DataSheet4U.com IRFNL210B IRFNL210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFNL210B Features

* 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92L IRFNL Series ! GDS S Absolute Maximum Ratings

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200V N-Channel MOSFET Fairchild Semiconductor
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