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SSP4N60AS - Advanced Power MOFET

Fairchild Semiconductor

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Datasheet Details

Part number: SSP4N60AS
Manufacturer: Fairchild Semiconductor
File Size: 253.60 KB
Datasheet: SSP4N60AS_FairchildSemiconductor.pdf
Description: Advanced Power MOFET

SSP4N60AS Product details

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Dr.

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Advanced Power MOFET Fairchild Semiconductor

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