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SSP4N80A - Advanced Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: SSP4N80A
Manufacturer: Fairchild Semiconductor
File Size: 282.71 KB
Datasheet: SSP4N80A_FairchildSemiconductor.pdf
Description: Advanced Power MOSFET

SSP4N80A Product details

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ. ) 1 2 3 SSP4N80A BVDSS = 800 V RDS(on) = 4.0 Ω ID = 4 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed.

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Advanced Power MOSFET Fairchild Semiconductor

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