Datasheet Specifications
- Part number
- FP2250QFN
- Manufacturer
- Filtronic
- File Size
- 233.15 KB
- Datasheet
- FP2250QFN_Filtronic.pdf
- Description
- PACKAGED LOW NOISE / HIGH LINEARITY PHEMT
Description
www.DataSheet4U.com Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT * .Features
* 29 dBm Output Power at 1-dB CompressionApplications
* The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recesFP2250QFN Distributors
📁 Related Datasheet
📌 All Tags