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FP2250QFN

PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

FP2250QFN Features

* 29 dBm Output Power at 1-dB Compression

* 17 dB Power Gain at 2 GHz

* 1.0 dB Noise Figure at 2 GHz

* 42 dBm Output IP3

* 50% Power-Added Efficiency

* DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged

FP2250QFN General Description

AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolitho.

FP2250QFN Datasheet (233.15 KB)

Preview of FP2250QFN PDF

Datasheet Details

Part number:

FP2250QFN

Manufacturer:

Filtronic

File Size:

233.15 KB

Description:

Packaged low noise / high linearity phemt.

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TAGS

FP2250QFN PACKAGED LOW NOISE HIGH LINEARITY PHEMT Filtronic

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