Datasheet4U Logo Datasheet4U.com

FP2250QFN Datasheet - Filtronic

PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

FP2250QFN General Description

AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolitho.

FP2250QFN Datasheet (233.15 KB)

Preview of FP2250QFN PDF

Datasheet Details

Part number:

FP2250QFN

Manufacturer:

Filtronic

File Size:

233.15 KB

Description:

Packaged low noise / high linearity phemt.

📁 Related Datasheet

FP200F Rectifier Stacks (VMI)

FP200F40ADFF1 FAST RECOVERY DIODE MODULE (JILIN SINO)

FP201 High-Frequency Amp/ Differential Amp Applications (Sanyo Semicon Device)

FP201L100 Differential Magnetoresistive Sensor (Siemens Semiconductor Group)

FP202 Push-Pull Circuit Applications (Sanyo Semicon Device)

FP203 Push-Pull Circuits (Sanyo Semicon Device)

FP204 Push-Pull Circuit Applications (Sanyo Semicon Device)

FP204G 2.0 AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS (Formosa MS)

FP205 Push-Pull Circuit Applications (Sanyo Semicon Device)

FP206 Push-Pull Circuit Applications (Sanyo Semicon Device)

TAGS

FP2250QFN PACKAGED LOW NOISE HIGH LINEARITY PHEMT Filtronic

Image Gallery

FP2250QFN Datasheet Preview Page 2 FP2250QFN Datasheet Preview Page 3

FP2250QFN Distributor