FIR120N055PG N-Channel Enhancement Mode Power Mosfet

First Semiconductor

Description

N-Channel Enhancement Mode Power Mosfet .
The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: FIR120N055PG
Manufacturer: First Semiconductor
File Size: 4.61 MB
Datasheet: FIR120N055PG-FirstSemiconductor.pdf
Description: N-Channel Enhancement Mode Power Mosfet

Features

* ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capabilit

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FIR120N055PG N-Channel Enhancement Mode Power Mosfet First Semiconductor

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