FIR120N055PG - N-Channel Enhancement Mode Power Mosfet

First Semiconductor

Datasheet Details

Part number	FIR120N055PG
Manufacturer	First Semiconductor
File Size	4.61 MB
Description	N-Channel Enhancement Mode Power Mosfet
Datasheet	FIR120N055PG-FirstSemiconductor.pdf

The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability.

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Published: Feb 4, 2025 |