FIR120N055PG Datasheet, Mosfet, First Semiconductor

FIR120N055PG Features

• Mosfet ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniform

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Part number:

FIR120N055PG

Manufacturer:

First Semiconductor

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4.61MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wi

FIR120N055PG Application

• Applications General Features ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully char

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FIR120N055PG

First Semiconductor

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