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FIR120N055PG

N-Channel Enhancement Mode Power Mosfet

FIR120N055PG Features

* ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capabilit

FIR120N055PG Datasheet (4.61 MB)

Preview of FIR120N055PG PDF

Datasheet Details

Part number:

FIR120N055PG

Manufacturer:

First Semiconductor

File Size:

4.61 MB

Description:

N-channel enhancement mode power mosfet.

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FIR120N055PG N-Channel Enhancement Mode Power Mosfet First Semiconductor

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